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D628 Datasheet Silicon NPN Darlington Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 7V IC Collector Current-Continunous 10 A ICM Collector Current-Peak IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 A 2A 80 W 150 ℃ -65~+150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD628 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA;

RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product.