Datasheet Details
| Part number | D628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 97.33 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
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| Part number | D628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 97.33 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
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·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 7V IC Collector Current-Continunous 10 A ICM Collector Current-Peak IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 A 2A 80 W 150 ℃ -65~+150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD628 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | D6282 | Dual 4.6W Audio Power Amplifier | ETC |
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D6283 | 4.6W Dual Audio Power Amplifier | Shaoxing Silicore Technology |
| Part Number | Description |
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