D726
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
- High Power Dissipation
- plement to Type 2SB690
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cn SYMBOL
PARAMETER
VALUE UNIT
.iscsem VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
80 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
8A 40 W 150 ℃
Tstg Storage Temperature Range
-45~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification
2SD726
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
80 5
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on)...
