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INCHANGE

D732 Datasheet Preview

D732 Datasheet

2SD732

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD732
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·High Current Capability
·Complement to Type 2SB696
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
12 A
80 W
150
-40~150
isc Websitewww.iscsemi.cn




INCHANGE

D732 Datasheet Preview

D732 Datasheet

2SD732

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD732
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE DC Current Gain
IC= 1A; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
120 V
150 V
6V
0.6 V
1.5 V
0.1 mA
0.1 mA
40 320
15 MHz
‹ hFE Classifications
CD
E
F
40-80 60-120 100-200 160-320
isc Websitewww.iscsemi.cn


Part Number D732
Description 2SD732
Maker INCHANGE
Total Page 2 Pages
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