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INCHANGE

D750 Datasheet Preview

D750 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD750
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Current Capability
APPLICATIONS
·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V
15 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
30 A
100 W
150
Tstg Storage Temperature Range
-65~150
isc websitewww.iscsemi.cn
1




INCHANGE

D750 Datasheet Preview

D750 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD750
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
ICBO Collector Cutoff Current
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
MIN TYP. MAX UNIT
80 V
7V
2.0 V
1.5 V
30 μA
40
30 120
1 MHz
‹ hFE-2 Classifications
QPO
30-60 40-80 60-120
isc websitewww.iscsemi.cn
2


Part Number D750
Description Silicon NPN Power Transistor
Maker INCHANGE
Total Page 2 Pages
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