D818
DESCRIPTION
- High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
- Low Collector Saturation Voltage- High Switching Speed
APPLICATIONS
- Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cn SYMBOL
PARAMETER
UNIT
.iscsem VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
IE Emitter Current-Continuous
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
-2.5 A 50 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD818
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.6A
ICBO Collector Cutoff...
