Datasheet Details
| Part number | D837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 128.29 KB |
| Description | 2SD837 |
| Datasheet |
 D837 Datasheet
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| Part number | D837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 128.29 KB |
| Description | 2SD837 |
| Datasheet |
D837 Datasheet
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·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 60 V 60 V 5V 4A 8A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product.
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