isc P-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=- 0.1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=-1mA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID=-8.5A
IGSS
Gate-Body Leakage Current
VGS= -15V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=-40V; VGS= 0
VSD
Forward On-Voltage
IS=-1mA; VGS= 0
DJR0417
MIN MAX UNIT
-40
V
-1
-2.5
V
75
mΩ
-100
uA
-100
μA
-16
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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