DJR0417 - P-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

Drain Current.
ID=-17A@ TC=25℃.
Drain Source Voltage- : VDSS=-40V(Min).
Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	DJR0417
Manufacturer	INCHANGE
File Size	261.18 KB
Description	P-Channel MOSFET
Datasheet	DJR0417 Datasheet
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isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-17A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =75mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous -15,+0 V ID Drain Current-Continuous -17 A PD Total Dissipation @TC=25℃ 48 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.

Published: Mar 14, 2021 |