Datasheet4U Logo Datasheet4U.com

DKI10299 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID=28A@ TC=25℃.
  • Drain Source Voltage- : VDSS=100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DKI10299 N Channel Trench Power MOSFET SANKEN
DKI10526 N Channel Trench Power MOSFET SANKEN
DKI10751 N Channel Trench Power MOSFET SANKEN
DKI03038 N Channel Trench Power MOSFET SANKEN
DKI03062 N-Channel MOSFET SANKEN

Other Datasheets by Inchange Semiconductor

Part Number Description
DKI10526 N-Channel MOSFET
DKI10751 N-Channel MOSFET
DKI03038 N-Channel MOSFET
DKI03062 N-Channel MOSFET
DKI03082 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 28 A PD Total Dissipation @TC=25℃ 47 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.