Datasheet4U Logo Datasheet4U.com

DMG8N65SCT - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 8.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMG8N65SCT N-CHANNEL MOSFET Diodes
DMG8601UFG Dual N-Channel MOSFET Diodes
DMG8822UTS Dual N-Channel MOSFET Diodes
DMG8880LK3 N-Channel MOSFET Diodes
DMG ELECTRIC DOUBLE LAYER CAPACITORS Rubycon

Other Datasheets by Inchange Semiconductor

Part Number Description
DMG8880LK3 N-Channel MOSFET
DMG10N60SCT N-Channel MOSFET
DMG3N60SCT N-Channel MOSFET
DMG3N60SJ3 N-Channel MOSFET
DMG4468LK3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 8.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 125 W TJ Max.