Datasheet4U Logo Datasheet4U.com

DMN4010LK3 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 39A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMN4010LK3 N-Channel MOSFET Diodes
DMN4010LFG N-Channel MOSFET Diodes
DMN4015LK3 New Generation MOSFET Diodes
DMN4008LFG N-Channel MOSFET Diodes
DMN4009LK3 New Generation MOSFET Diodes

Other Datasheets by Inchange Semiconductor

Part Number Description
DMN4026SK3 N-Channel MOSFET
DMN4030LK3 N-Channel MOSFET
DMN4036LK3 N-Channel MOSFET
DMN4040SK3 N-Channel MOSFET
DMN10H099SK3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 40 V ±20 V ID Drain Current-Continuous 39 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 27 W TJ Max.