Datasheet4U Logo Datasheet4U.com

DMN6068LK3 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 8.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 68mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMN6068LK3 N-Channel MOSFET Diodes
DMN6068LK3Q 60V N-CHANNEL MOSFET DIODES
DMN6068SE 60V N-Channel MOSFET Diodes
DMN6068SE-13 N-Channel 60V MOSFET VBsemi
DMN6068SEQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

Other Datasheets by Inchange Semiconductor

Part Number Description
DMN6017SK3 N-Channel MOSFET
DMN6040SK3 N-Channel MOSFET
DMN60H3D5SK3 N-Channel MOSFET
DMN60H4D5SK3 N-Channel MOSFET
DMN10H099SK3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 68mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 V ±20 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pluse 22.2 A PD Total Dissipation @TC=25℃ 33 W TJ Max.