Datasheet Details
| Part number | DMN80H2D0SCTI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.07 KB |
| Description | N-Channel MOSFET |
| Download | DMN80H2D0SCTI Download (PDF) |
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| Part number | DMN80H2D0SCTI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.07 KB |
| Description | N-Channel MOSFET |
| Download | DMN80H2D0SCTI Download (PDF) |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 800 V ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 41 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor DMN80H2D0SCTI.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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