DPG60C200HB Datasheet | Inchange Semiconductor

FEATURES - With TO-247 packaging - High performance fast recovery diode - Low loss and soft recovery - mon cathode - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Power switching circuits - General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=140℃ Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 50Hz) Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：.iscsemi. 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MAX 0.95 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL...