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EKG1020 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 55 W TJ Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.27 ℃/W EKG1020 isc website:.iscsemi.

Key Features

  • Drain Current.
  • ID=20A@ TC=25℃.
  • Drain Source Voltage- : VDSS=100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

EKG1020 Distributor