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EKV550 - N-Channel MOSFET

General Description

purpose applications.

Overview

isc N-Channel MOSFET Transistor.

Key Features

  • Drain Current.
  • ID=50A@ TC=25℃.
  • Drain Source Voltage- : VDSS=50V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.