High Reliability
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Switching regulators
Motor controls
High frequency inverters
General purpose power a
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Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
ET375
DESCRIPTION ·High Reliability ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
650
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R
ET375 Datasheet
