FCP067N65S3
FCP067N65S3 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With TO-220 packaging
- High speed switching
- Very high mutation ruggedness
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operationz
- APPLICATIONS
- PFC stages
- UPS
- Power supply
- Switching applications
INCHANGE Semiconductor
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
44 28
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal...
