Download FCP099N65S3 Datasheet PDF
Inchange Semiconductor
FCP099N65S3
FEATURES - With TO-220 packaging - Low switching loss - Ultra low gate charge - Easy to use - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operationz - APPLICATIONS - Switching applications - DC-DC converters - Uninterruptible power supply - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 30 19 Total Dissipation Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.55...