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FCP104N60F - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤104mΩ.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FCP104N60F

Datasheet Details

Part number FCP104N60F
Manufacturer INCHANGE
File Size 222.99 KB
Description N-Channel MOSFET
Datasheet download datasheet FCP104N60F Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP104N60F ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤104mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Lighting ·AC-DC Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 37 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 350 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.36 62.
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