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FCP260N65S3 - N-Channel MOSFET

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Overview

isc N-Channel MOSFET Transistor ·.

Key Features

  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

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ON Semiconductor Logo FCP260N65S3 N-Channel MOSFET ON Semiconductor

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