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FCP380N60 - N-Channel MOSFET

Key Features

  • With TO-220 packaging.
  • Low switching loss.
  • Ultra low gate charge.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCP380N60 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10.2 6.4 30.