Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- With TO-220F packaging
- Drain Source Voltage-
: VDSS ≥ 600V
- Static drain-source on-resistance:
RDS(on) ≤ 400mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Power supply
- Switching applications
-...
