FDH44N50
FEATURES
- With TO-247 packaging
- With low gate drive requirements
- Easy to drive
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.2
UNIT ℃/W
FDH44N50 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET...
