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FDP39N20 N-Channel MOSFET

FDP39N20 Description

isc N-Channel MOSFET Transistor FDP39N20 *.

FDP39N20 Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 200V
* Static drain-source on-resistance: RDS(on) ≤ 66mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP39N20 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 39 A IDM Drain Current-Single Pulsed 156 A PD Total Dissipation 2

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Datasheet Details

Part number
FDP39N20
Manufacturer
INCHANGE
File Size
278.90 KB
Datasheet
FDP39N20-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDP39N20-like datasheet