Download FESB16GT Datasheet PDF
Inchange Semiconductor
FESB16GT
FEATURES - With TO-263(DPAK) packaging - Low forward voltage drop - Super high speed switching - High reliability by planer design - High surge current capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Power switching circuits - High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 400 V Average Rectified Forward Current @Tc=100℃;Square Wave; Duty=1/2 16 A Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on 250 A rated load conditions Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE Semiconductor MAX 1.2 UNIT...