FFAF60UA60DN
FEATURES
- With TO-3PFa packaging
- High junction temperature capability
- Low forward voltage
- High current capability
- Low power loss, high efficiency
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching power supply
- Free-Wheeling diodes
- Reverse battery protection
- Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=110℃
VALUE
UNI T
Nonrepetitive Peak Surge Current
IFSM
(10ms single half sine-wave superimposed on
A rated load conditions)
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Ultra fast Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
