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FJA4310 Datasheet Preview

FJA4310 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·DC Current Gain-
: hFE= 50(Min)@ IC= 3A
·Complement to Type FJA4210
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1.5
A
100
W
150
Tstg
Storage Temperature
-55~150
FJA4310
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

FJA4310 Datasheet Preview

FJA4310 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC=1A; VCE= 5V
FJA4310
MIN TYP. MAX UNIT
140
V
200
V
6
V
0.5
V
10 μA
10 μA
50
180
250
pF
30
MHz
hFE Classifications
R
O
Y
50-100 70-140 90-180
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number FJA4310
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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FJA4310 Datasheet PDF





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