Datasheet Details
| Part number | FJA4310 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.06 KB |
| Description | NPN Transistor |
| Datasheet | FJA4310-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | FJA4310 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.06 KB |
| Description | NPN Transistor |
| Datasheet | FJA4310-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Complement to Type FJA4210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ FJA4310 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FJA4310 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| FJA4313 | NPN Transistor |
| FJA4210 | PNP Transistor |
| FJA4213 | PNP Transistor |
| FJAF6810 | NPN Transistor |