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INCHANGE

FJB102 Datasheet Preview

FJB102 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
FJB102
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
·Low Collector-Emitter Saturation Voltage
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
IB
Base Current
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
5
V
8
A
15
A
1
A
80
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

FJB102 Datasheet Preview

FJB102 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
FJB102
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
MIN
TYP MAX UNIT
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage
IC= 3.0A; IB= 6mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage
IC= 8A; IB= 80mA
2.5
V
VBE(on)
ICBO
Base-Emitter On Voltage
Collector Cutoff Current
IC= 8A; VCE=4V
VCB= 100V; IE= 0
2.8
V
50
μA
ICEO
Collector Cutoff Current
VCE= 50V, IB= 0
50
μA
IEBO
hFE-1
hFE-2
Cob
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector output capacitance
VEB= 5V; IC= 0
IC= 3A; VCE= 4V
IC= 8A; VCE= 4V
VCB=10V ,IE=0,f=1MHz
1000
200
2
mA
20000
200
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number FJB102
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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