FJL6820 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.5mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.5mA.