FJL6920 - NPN Transistor

Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 1700V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	FJL6920
Manufacturer	INCHANGE
File Size	192.45 KB
Description	NPN Transistor
Datasheet	FJL6920 Datasheet
Additional preview pages of the FJL6920 datasheet.

📁 Similar Datasheet

FJL6920 - NPN Triple Diffused Planar Silicon Transistor (Fairchild Semiconductor)
FJL6920 - NPN Triple Diffused Planar Silicon Transistor (ON Semiconductor)
FJL6820 - NPN Triple Diffused Planar Silicon Transistor (Fairchild Semiconductor)
FJL6825 - NPN Triple Diffused Planar Silicon Transistor (Fairchild Semiconductor)
FJL4215 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
FJL4215 - PNP Epitaxial Silicon Transistor (ON Semiconductor)
FJL4315 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
FJL4315 - NPN Transistor (ON Semiconductor)

Other Datasheets by INCHANGE

FJL6820 - NPN Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor FJL6920 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Sep 8, 2020 |