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FJL6920 - NPN Transistor

General Description

High Switching Speed High Breakdown Voltage- : V(BR)CBO= 1700V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor FJL6920 DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.