Datasheet Details
| Part number | FJP3305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.01 KB |
| Description | Silicon NPN Transistor |
| Datasheet | FJP3305-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | FJP3305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.01 KB |
| Description | Silicon NPN Transistor |
| Datasheet | FJP3305-INCHANGE.pdf |
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·Large current capacitance ·High Power Dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ·Suitable for Electronic Ballast and Switching Regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ FJP3305 isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor FJP3305 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 V(BR)EBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.2A VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.5A VCE(sat) -3 Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FJP3305 | High Voltage Fast-Switching NPN Power Transistor | Fairchild Semiconductor |
| Part Number | Description |
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| FJP13009 | Silicon NPN Power Transistor |
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