900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

FMP20N60S1 Datasheet Preview

FMP20N60S1 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FMP20N60S1
·FEATURES
·With TO-220 packaging
·Low switching loss
·Low on-state resistance
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·DC-DC converters
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25
Tc=100
Drain Current-Single Pulsed
±30
20
12.6
60
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.83
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

FMP20N60S1 Datasheet Preview

FMP20N60S1 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FMP20N60S1
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
2.5
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=10A
161 190
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;Tc=25
VDS= 480V; VGS= 0V;Tc=125
ISD=20A, VGS = 0 V
±0.1 μA
25
250
μA
1.35
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number FMP20N60S1
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
PDF Download

FMP20N60S1 Datasheet PDF





Similar Datasheet

1 FMP20N60S1 N-CHANNEL SILICON POWER MOSFET
Fuji Electric
2 FMP20N60S1 N-Channel MOSFET
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy