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FQD13N10 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤0.18Ω.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FQD13N10

Datasheet Details

Part number FQD13N10
Manufacturer INCHANGE
File Size 273.83 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD13N10 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 3.1 UNIT ℃/W FQD13N10 isc website：www.iscsemi.
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