FQD50P06 Datasheet (PDF) Download
Inchange Semiconductor
FQD50P06

Description

Designed for high current switching applications.

Key Features

  • Drain Current -ID= -50A@ TC=25℃
  • Drain Source Voltage- : VDSS= -60V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation