FQD50P06 Datasheet P-Channel MOSFET

Manufacturer: Inchange Semiconductor

FQD50P06 p-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FQD50P06
Manufacturer	Inchange Semiconductor
File Size	248.74 KB
Description	P-Channel MOSFET
Download	FQD50P06 Download (PDF)

General Description

·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.31 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor FQD50P06 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc P-Channel MOSFET Transistor FQD50P06.

Key Features

Drain Current.
ID= -50A@ TC=25℃.
Drain Source Voltage- : VDSS= -60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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