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FQD50P06 P-Channel MOSFET

FQD50P06 Description

isc P-Channel MOSFET Transistor FQD50P06 .
Designed for high current switching applications.

FQD50P06 Features

* Drain Current
* ID= -50A@ TC=25℃
* Drain Source Voltage- : VDSS= -60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V
* 100% avalanche tested

FQD50P06 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max. Operating Junction Temper

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Datasheet Details

Part number
FQD50P06
Manufacturer
INCHANGE
File Size
248.74 KB
Datasheet
FQD50P06-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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