Datasheet Details
| Part number | FQP20N06L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.68 KB |
| Description | N-Channel MOSFET |
| Download | FQP20N06L Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L.
| Part number | FQP20N06L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.68 KB |
| Description | N-Channel MOSFET |
| Download | FQP20N06L Download (PDF) |
|
|
|
·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM PD Drain-Source Voltage Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulse Drain Current Power Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±20 V 21 A 84 A 60 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250uA VGS(TH) Gate Threshold Voltage VDS= VGS;
Compare FQP20N06L distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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