Download HFA32PA120C Datasheet PDF
Inchange Semiconductor
HFA32PA120C
FEATURES - Guarding for over voltage protection - Dual rectifier construction,positive center tap - Metal of silicon rectifier,majority carrier conduction - Low forward voltage,high efficiency - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Rectifier in switch mode supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) Maximum power dissipation VALUE UNIT Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultrafast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case INCHANGE...