Datasheet Details
| Part number | HUFA75545P3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.86 KB |
| Description | N-Channel MOSFET |
| Download | HUFA75545P3 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor HUFA75545P3.
| Part number | HUFA75545P3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 252.86 KB |
| Description | N-Channel MOSFET |
| Download | HUFA75545P3 Download (PDF) |
|
|
|
·Drain Current ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as switching Regulators,switching converters, motor drivers and Relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 80 V ±20 V 75 A 270 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal Resistance,Junction to Case MAX UNIT 0.55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor HUFA75545P3 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HUFA75545P3 | N-Channel MOSFET | Fairchild Semiconductor |
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