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IDP20E65D2 - Ultrafast Recovery Rectifier

Key Features

  • Ultrafast Recovery Time.
  • Low Forward Voltage.
  • Low Leakage Current.
  • 175℃ Operating Junction Temperature.
  • High Temperature Glass Passivated Junction.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Ultrafast Recovery Diode INCHANGE Semiconductor IDP20E65D2 FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 650 V IF(AV) IFSM TJ Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 120 A wave, single phase, tp=8.