IPA037N08N3 - N-Channel MOSFET

INCHANGE

IPA037N08N3 Description

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 *.

IPA037N08N3 Features

* Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPA037N08N3 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 41 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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IPA037N08N3 Datasheet Preview — Preview of IPA037N08N3 PDF

Datasheet Details

Part number: IPA037N08N3
Manufacturer: INCHANGE
File Size: 251.42 KB
Datasheet: IPA037N08N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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