IPA083N10N5 N-Channel MOSFET

INCHANGE

IPA083N10N5 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 *.

IPA083N10N5 Features

* With To-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA083N10N5 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 44 32 176 PD Total Dissipation @TC=25℃ 36 Tj Max. Operating Ju

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IPA083N10N5 Datasheet Preview — Preview of IPA083N10N5 PDF

Datasheet Details

Part number: IPA083N10N5
Manufacturer: INCHANGE
File Size: 196.98 KB
Datasheet: IPA083N10N5-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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