IPA50R500CE - N-Channel MOSFET

Features

With TO-220F package.
Low input capacitance and gate charge.
Low gate input resistance.
Reduced switching and conduction losses.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPA50R500CE
Manufacturer	INCHANGE
File Size	196.84 KB
Description	N-Channel MOSFET
Datasheet	IPA50R500CE Datasheet
Additional preview pages of the IPA50R500CE datasheet.

📁 Similar Datasheet

IPA50R500CE - MOSFET (Infineon)
IPA50R520CP - Power Transistor (Infineon)
IPA50R140CP - Power Transistor (Infineon)
IPA50R190CE - MOSFET (Infineon)
IPA50R199CP - Power-Transistor (Infineon Technologies)
IPA50R250CP - Power Transistor (Infineon)
IPA50R280CE - MOSFET (Infineon)
IPA50R299CP - Power-Transistor (Infineon Technologies)
IPA50R350CP - Power-Transistor (Infineon Technologies)
IPA50R380CE - MOSFET (Infineon)

Other Datasheets by INCHANGE

IPA50R520CP - N-Channel MOSFET
IPA50R140CP - N-Channel MOSFET
IPA50R190CE - N-Channel MOSFET
IPA50R199CP - N-Channel MOSFET
IPA50R250CP - N-Channel MOSFET
IPA50R280CE - N-Channel MOSFET
IPA50R299CP - N-Channel MOSFET
IPA50R350CP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA50R500CE ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 11.1 7.0 24 PD Total Dissipation @TC=25℃ 83 Tj Max.

Published: Sep 2, 2020 |