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IPA60R099P6 - N-Channel MOSFET

IPA60R099P6 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R099P6 *.

IPA60R099P6 Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA60R099P6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 37.9 24 A IDM Drain Current-Single Pulsed 109 A PD Total Diss

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Datasheet Details

Part number
IPA60R099P6
Manufacturer
INCHANGE
File Size
218.86 KB
Datasheet
IPA60R099P6-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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