IPA60R120P7
Key Features
- Drain-source on-resistance: RDS(on) ≤ 0.12Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Part: IPA60R120P7
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 235.16 KB