IPA60R190P6 Overview
Key Features
- Drain Source Voltage- : VDSS=500V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IPA60R190P6 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 221.42 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPA60R190P6 | Infineon | MOSFET |
| IPA60R190C6 | Infineon | MOSFET |
| 60R190C6 | Infineon | IPA60R190C6 |
| 60R190E6 | Infineon | IPA60R190E6 |
| IPA60R190E6 | Infineon | E6 Power Transistor |