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IPA60R199CP - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤0.199Ω.
  • High peak current capability.
  • Enhancement mode.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·High peak current capability ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Hard switching SMPS topologies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 34 Tj Max.
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