IPA60R199CP - N-Channel MOSFET

INCHANGE

IPA60R199CP Description

isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP *.

IPA60R199CP Features

* Static drain-source on-resistance: RDS(on) ≤0.199Ω
* High peak current capability
* Enhancement mode
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA60R199CP Applications

* Hard switching SMPS topologies
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 34 Tj Max. Operating Junction

📥 Download Datasheet

IPA60R199CP Datasheet Preview — Preview of IPA60R199CP PDF

Datasheet Details

Part number: IPA60R199CP
Manufacturer: INCHANGE
File Size: 235.85 KB
Datasheet: IPA60R199CP-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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