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IPA60R380E6 - N-Channel MOSFET

IPA60R380E6 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R380E6 *.

IPA60R380E6 Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA60R380E6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 10.6 6.7 30 PD Total Dissipation @TC=25℃ 31 T

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Datasheet Details

Part number
IPA60R380E6
Manufacturer
INCHANGE
File Size
219.26 KB
Datasheet
IPA60R380E6-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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