Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA65R125C7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
650
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=0.44mA
3.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=8.9A
111
125
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS=±20V;VDS= 0V
VDS= 650V; VGS= 0V;Tj=25℃
VDS= 650V; VGS= 0V; Tj=150℃
ISD=8.9A, VGS = 0V
±0.1 μA
1
100
μA
0.9
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
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contact us if you intend our products to be used in these special applications.
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