Download IPA65R660CFD Datasheet PDF
Inchange Semiconductor
IPA65R660CFD
FEATURES - With TO-220F Package - Drain Source Voltage- : VDSS=650V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 6 3.8 Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage...