IPA80R310CE Datasheet | Inchange Semiconductor

FEATURES - With TO-220F packaging - With low gate drive requirements - Easy to drive - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 16.7 10.6 Total Dissipation Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.6 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS...