IPA90R1K2C3 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPA90R1K2C3
Manufacturer	INCHANGE
File Size	241.77 KB
Description	N-Channel MOSFET
Datasheet	IPA90R1K2C3-INCHANGE.pdf

IPA90R1K2C3 Product details

Description

High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 31 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(

Features

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Static drain-source on-resistance: RDS(on) ≤1.2Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 8, 2020 |