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IPA90R1K2C3 - N-Channel MOSFET

General Description

High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 31 T

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤1.2Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IPA90R1K2C3，IIPA90R1K2C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 31 Tj Max.